SW1N60 डाटा शीट PDF( Datasheet )

SAMWIN SW1N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 12 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-251 TO-252 TO-126 12 3 1

SAMWIN SW1N60A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-92 12 3 1. Gate 2. Drain 3.

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com SSW/I1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 1 A D2-PAK 2 Lower Input Capacitance Improved Gate Ch

SAMWIN SW1N60C N-channel D-PAK/I-PAK/TO-92 MOSFET Features TO-251 TO-252 TO-92 ■ High ruggedness ■ RDS(ON) (Max 9 Ω)@VGS=10V ■ Gate Charge (Typical 5.6nC) ■ Improved dv/dt Capability ■ 100% A

SAMWIN SW1N60D N-channel I-PAK/TO-92 MOSFET Features TO-251 TO-92 ■ High ruggedness ■ RDS(ON) (Max8.5Ω)@VGS=10V ■ Gate Charge (Typical 6.8 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Test

SW1N60E N-channel Enhanced mode TO-92/TO-251 MOSFET Features TO-92 TO-251  High ruggedness  Low RDS(ON) (Typ7.3Ω)@VGS=10V  Low Gate Charge (Typ3.7nC)  Improved dv/dt Capability  100% Avala

SAMWIN SW1N60L N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 23 Ω)@VGS=10V ■ Gate Charge (Max 4.5nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-92 1 2 3 1. Gate 2. Drain