SW069R10VS डाटा शीट PDF( Datasheet )

SW069R10VS Features N-channel Enhanced mode TO-220FTS MOSFET  High ruggedness  Low RDS(ON) (Typ 9.4mΩ)@VGS=4.5V (Typ 7.8mΩ)@VGS=10V  Low Gate Charge (Typ 42nC)  Improved dv/dt Capability 

isc N-Channel MOSFET Transistor INCHANGE Semiconductor SW069R10VS ·FEATURES ·With TO-252(DPAK) packaging ·High speed switching ·Easy to use ·Low on resistance, low gate charge ·Excellent avalanche chara