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STW68N60M6 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
STW68N60M6

STMicroelectronics
N-CHANNEL POWER MOSFET
Order code VDS RDS(on) max. STW68N60M6 600 V 41 mΩ
• Reduced switching losses
• Lower RDS(on) per area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected Applications
• Switching applications
• LLC co
Datasheet
2
STW68N60M6-4

STMicroelectronics
N-CHANNEL POWER MOSFET
Order code VDS RDS(on) max. ID STW68N60M6-4 600 V 41 mΩ 63 A
• Reduced switching losses
• Lower RDS(on) per area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
• Excellent switching performance t
Datasheet



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