STP11NM60ND डाटा शीट PDF( Datasheet )

STP11NM60ND Datasheet N-channel 600 V, 370 mΩ typ., 10 A FDmesh II Power MOSFET in a TO-220 package Features TAB TO-220 1 23 D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STP11NM60ND 650 V 45

isc N-Channel MOSFET Transistor STP11NM60ND FEATURES ·Drain Current –ID= 6.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) ·100% avalanch