No. | Partie # | Fabricant | Description | Fiche Technique |
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TGS |
Silicon Bidirectional Triode Thyristors — — 5.0 — — 5.0 mA — — 5.0 — — 12 — 0.5 1.8 V |
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SemiWell Semiconductor |
(STN1A60 / STN1A80) Bi-Directional Triode Thyristor Repetitive Peak Off-State Voltage : 600/800V R.M.S On-State Current ( IT(RMS)= 1 A ) ◆ High Commutation dv/dt ◆ ◆ ○ 3.T2 ▼ ▲ ○ 2.Gate 1.T1 ○ General Description This device is suitable for low power AC switching application, phase control appl |
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SemiWell Semiconductor |
(STN1A60 / STN1A80) Bi-Directional Triode Thyristor Repetitive Peak Off-State Voltage : 600/800V R.M.S On-State Current ( IT(RMS)= 1 A ) ◆ High Commutation dv/dt ◆ ◆ ○ 3.T2 ▼ ▲ ○ 2.Gate 1.T1 ○ General Description This device is suitable for low power AC switching application, phase control appl |
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WINSEMI |
Bi-Directional Triode Thyristor ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S On-State Current(IT(RMS)=1A ■ Low on-state voltage: VTM=1.2(typ.)@ ITM ■ Low reverse and forward blocking current: IDRM=500uA@TC=125℃ ■ Low holding current: IH=4mA (typ.) ■ High Commutation dV/dt. ST |
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