STD5NM50T4 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor STD5NM50T4 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.8Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable o

STD5NM50T4 Datasheet N-channel 500 V, 0.7 Ω typ., 7.5 A, MDmesh™ Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) Features Order code VDS RDS(on) max. STD5NM50T4 500 V 0.8 Ω • 100% avalanch