STB11NM60 डाटा शीट PDF( Datasheet )

isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d

www.DataSheet4U.com STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh™Power MOSFET TYPE STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 VDSS 600 V 600

isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d

www.DataSheet4U.com STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh™Power MOSFET TYPE STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 VDSS 600 V 600

www.DataSheet4U.com N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh™Power MOSFET TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 n n n n STP11NM60A STP11NM60AFP - STB11NM60A-1 VDSS 600 V 600 V 600 V

www.DataSheet4U.com STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40Ω - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh™ Power MOSFET (with fast diode) General features Type STB11NM60

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STB11NM60FD ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum