डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SSS4N80 | N-Channel Power MOSFETS |
Samsung |
|
SSS4N80AS | Advanced Power MOSFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 80 |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |