SSP4N60AS डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| SSP4N60AS | Advanced Power MOFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 6 |
 Fairchild Semiconductor |
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| SSP4N60AS | Advanced Power MOFET |
 Samsung Electronics |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |