SSP4N60 डाटा शीट PDF( Datasheet )

डेटा पत्रक ( Datasheet PDF )

भाग संख्या	विवरण	मैन्युफैक्चरर्स	PDF
SSP4N60	(SSP4N55 / SSP4N60) N-Channel Power MOSFET www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com	Samsung Electronics	PDF
SSP4N60AS	Advanced Power MOFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 6	Fairchild Semiconductor	PDF
SSP4N60AS	Advanced Power MOFET	Samsung Electronics	PDF
SSP4N60B	600V N-Channel MOSFET SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technolo	Fairchild Semiconductor	PDF

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