SSM9926 डाटा शीट PDF( Datasheet )

SSM9926 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @ VGS = 4.0V 20V 5A 40 @ VGS = 2.5V SO-8 FEATURES ◆Super high dense cell design for low RDS(ON). ◆Rugge

SSM9926A Comman Drain Dual N-Channel Enhancement Mode MOSFET Product Summary 8 SOP-8 7 6 5 VDS (V) ID (A) RDS(ON) (m ) Max 30 @VGS = 4.0V 20V 6A 40 @VGS = 2.5V 1 2 3 4 D1 (7, 8) D2 (5, 6) FEATURES

SSM9926EM N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive Low drive current Surface-mount package Description D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Power MOSFETs from Silicon St

SSM9926GEO N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive Low drive current Surface-mount package G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 Description Power MOSFETs from Silic

SSM9926GM Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY BVDSS R DS(ON) ID 20V 30mΩ 6A Pb-free; RoHS-compliant SO-8 D2 D2 D1 D1 SO-8 G2 S2 G1 S1 DESCRIPTION The SSM9926GM acheives fast s

PRODUCT SUMMARY Low on-resistance Capable of 2.5V gate drive Low drive current Surface mount package SSM9926O N-CHANNEL ENHANCEMENT MODE POWER MOSFET A D1 G1 G2 S1 D2 S2 DESCRIPTION The Advanced Power MOSFE