डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SSM6J512NU | Silicon P-Channel MOSFET MOSFETs Silicon P-Channel MOS
SSM6J512NU
1. Applications
• Power Management Switches
2. Features
(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 24.0 mΩ (typ.) (@VGS = -1.8 V) R |
Toshiba |
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SSM6J512NU | Silicon P-Channel MOSFET | Toshiba |
www.DataSheet.in | 2017 | संपर्क |