डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
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Samsung Electronics |
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SSF6N80A | Advanced Power MOSFET Advanced Power MOSFET
SSF6N80A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) |
Fairchild Semiconductor |
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SSF6N80A6 | 800V N-Channel MOSFET Main Product Characteristics
VDSS
800V
RDS(on) 2.2Ω (typ.)
ID 5.5A
TO-262
Features and Benefits
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose ap |
GOOD-ARK |
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