SSF2816E डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| SSF2816E | MOSFET SSF2816E
www.DataSheet4U.com
DESCRIPTION
The SSF2816E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
GENERAL FEATURES
● VDS = |
 Silikron Semiconductor Co |
|
| SSF2816EB | Dual N-Channel MOSFET DESCRIPTION
The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V.
SSF2816EB
20V Dual N-Channel MOSFET
GENERAL FEATURES
|
 GOOD-ARK |
|
| SSF2816EB | MOSFET DESCRIPTION
The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V.
SSF2816EB
GENERAL FEATURES
● VDS = 20V,ID = 7A RDS(O |
 Silikron Semiconductor |
|
| SSF2816EBK | Dual N-Channel MOSFET DESCRIPTION
The SSF2816EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
SSF2816EBK
20V Dual N-Channel MOSFET
GENERAL FEATURES
|
GOOD-ARK |
शेयर लिंक :
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