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SSF2814E | N-Channel MOSFET DESCRIPTION
The SSF2814E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
SSF2814E
20V Dual N-Channel MOSFET
GENERAL FEATURES
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GOOD-ARK |
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SSF2814E | MOSFET DESCRIPTION
The SSF2814E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
SSF2814E
GENERAL FEATURES
● VDS = 20V,ID = 7A RDS(ON) |
Silikron Semiconductor |
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SSF2814EH2 | MOSFET Main Product Characteristics:
VDSS RDS(on)
ID
20V 14mΩ (typ.)
8A①
Features and Benefits:
TSSOP-8
Advanced MOSFET process technology Ultra low on-resistance with low gate charge High Power an |
Silikron Semiconductor |
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