डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SSF2301 | PWM applications www.DataSheet4U.com
SSF2301
DESCRIPTION
The SSF2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for u |
Silikron Semiconductor Co |
|
SSF2301A | PWM applications www.DataSheet4U.com
SSF2301A
DESCRIPTION
The SSF2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for |
Silikron Semiconductor Co |
|
SSF2301B | PWM applications SSF2301B
www.DataSheet4U.com
DESCRIPTION
The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for |
Silikron Semiconductor Co |
|
SSF2301B | 20V P-Channel MOSFET SSF2301B
20V P-Channel MOSFET
DESCRIPTION
The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for |
GOOD-ARK |
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SSF2301C | PWM applications SSF2301C
www.DataSheet4U.com
DESCRIPTION
The SSF2301C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for |
Silikron Semiconductor Co |
www.DataSheet.in | 2017 | संपर्क |