SSF10N60 डाटा शीट PDF( Datasheet )

Main Product Characteristics: VDSS RDS(on) 600V 0.69Ω (typ.) ID 10A Features and Benefits: TO-220  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose a

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SSF10N60B November 2001 SSF10N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technolog

Main Product Characteristics: VDSS 600V RDS(on) 0.69ohm(typ.) ID 10A Features and Benefits: TO220F  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose