SPD50N03S2 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor SPD50N03S2,ISPD50N03S2 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤7.3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust

OptiMOS&!Power-Transistor Feature % N-Channel % Enhancement mode % Excellent Gate Charge x RDS(on) product (FOM) %!Superior thermal resistance %!175°C operating temperature % Avalanche rated % dv/dt rated ´ U

OptiMOS&!Power-Transistor Feature % N-Channel % Enhancement mode % Excellent Gate Charge x RDS(on) product (FOM) %!Superior thermal resistance %!175°C operating temperature % Avalanche rated % dv/dt rated ´ U

SPD50N03S2L-06 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 30 6.4 50 P- TO252 -3-11 V mΩ A • Enhancement mode • Logic Level • High Current Rating • Excellent Ga