SPD30P06P डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| SPD30P06P | Power Transistor SPD30P06P G
SIPMOS® Power-Transistor
Features
Product Summary
· P-Channel · Enhancement mode · Avalanche rated · dv/dt rated
Drain source voltage
VDS
-60 V
W Drain-source on-state resistance RDS(on |
 Infineon Technologies |
|
| SPD30P06P | P-Channel MOSFET isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤75mΩ(@VGS= -10V; ID= -21.5A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variat |
 INCHANGE |
|
| SPD30P06PG | Power Transistor SPD30P06P G
SIPMOS® Power-Transistor
Features
Product Summary
· P-Channel · Enhancement mode · Avalanche rated · dv/dt rated
Drain source voltage
VDS
-60 V
W Drain-source on-state resistance RDS(on |
 Infineon |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |