SPD30N03 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com SIPMOS® Power Transistor Features • N channel • SPD 30N03 30 30 V A Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID Enhancemen

SPD30N03L SIPMOS® Power Transistor Features • N channel • Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 30 V A RDS(on) 0.012

isc N-Channel MOSFET Transistor SPD30N03S2L,ISPD30N03S2L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤10mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust

OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avala

OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avala

OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C o

OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C o