डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SPD08N50C3 | Power Transistor SPD08N50C3
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 • Ultra low gate charge
VDS @ Tjmax 560 V
RDS(on)
0.6 Ω
ID
7.6 A
PG- |
Infineon Technologies |
|
SPD08N50C3 | N-Channel MOSFET isc N-Channel MOSFET Transistor SPD08N50C3, ISPD08N50C3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤600mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |