डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SPD07N20G | N-Channel MOSFET isc N-Channel MOSFET Transistor
SPD07N20G,ISPD07N20G
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev |
INCHANGE |
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SPD07N20G | Power Transistor SIPMOS® Power Transistor
Features • N channel • Enhancement mode • Avalanche rated
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
• dv/dt rated
SPD 0 |
Infineon |
www.DataSheet.in | 2017 | संपर्क |