डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SPD03N60C3 | Power Transistor 2B>PQNB % FUf aUe_dcY_^Qah XYWX e_cQWU cUSX^__Wh % McaQ _f WQcU SXQaWU
VDS Tjmjmaxax 0/*
N
*=K"_^#
+(. !
'=
-(, 9
% HUaY_TYS QeQQ^SXU aQcUT
H*'LG,/+
H*'LG,/,
% >gcaU]U T3)T2 aQcUT
% AYWX `UQ[ SdaaU^c |
Infineon Technologies |
|
SPD03N60C3 | N-Channel MOSFET isc N-Channel MOSFET Transistor
SPD03N60C3,ISPD03N60C3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |