डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SPB80N03 | SIPMOS Power Transistor SPP80N03 SIPMOS® Power Transistor
Features • N channel
•
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS ID
30 80
V A
Enhancement mode
RDS(on) 0.006 |
Siemens Semiconductor Group |
|
SPB80N03L | Power Transistor SPP80N03L SIPMOS® Power Transistor
Features • N channel
• Enhancement mode
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS ID
30 80
V A
RDS(on) 0.006 |
Siemens |
|
SPB80N03S2-03 | OptiMOS Power-Transistor SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03
OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
30 3.1 80
P- TO220 -3-1
V mΩ A
• Enhancement mod |
Infineon Technologies |
|
SPB80N03S2-03 | OptiMOS Power-Transistor www.DataSheet4U.com
SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03
OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
30 3.1 80
P- TO220 -3-1
V mΩ A |
Infineon Technologies |
|
SPB80N03S2L-03 | OptiMOS Power-Transistor SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03
OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO262 -3-1 P- TO263 -3-2
30 2.8 80
P- TO220 -3-1
V mΩ A
� |
Infineon Technologies |
|
SPB80N03S2L-03 | OptiMOS Power-Transistor www.DataSheet4U.com
SPI80N03S2L-03 SPP80N03S2L-03,SPB80N03S2L-03
OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO262 -3-1 P- TO263 -3-2
30 2.8 80
P- TO2 |
Infineon Technologies |
|
SPB80N03S2L-04 | OptiMOS Power-Transistor SPI80N03S2L-04 SPP80N03S2L-04,SPB80N03S2L-04
OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO262 -3-1 P- TO263 -3-2
30 3.9 80
P- TO220 -3-1
V mΩ A
� |
Infineon Technologies |
www.DataSheet.in | 2017 | संपर्क |