SPB08P06P डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| SPB08P06P | Power-Transistor SIPMOS® Power-Transistor
Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing; RoHS compliant ° Halogen-free according t |
 Infineon Technologies |
|
| SPB08P06P | P-Channel MOSFET isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤300mΩ(@VGS= -10V; ID= -6.2A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variat |
 INCHANGE |
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| SPB08P06PG | Power-Transistor SIPMOS® Power-Transistor
Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing; RoHS compliant ° Halogen-free according t |
Infineon Technologies |
शेयर लिंक :
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www.DataSheet.in | 2017 | संपर्क |