डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SMBT3906 | PNP Silicon Switching Transistor PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U:
Two (galvanic) internal isolated transistor with good m |
Infineon Technologies AG |
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SMBT3906DW1 | Dual General Purpose Transistor MBT3906DW1, SMBT3906DW1 Dual General Purpose Transistor
The MBT3906DW1 device is a spin −off of our popular SOT−23/SOT−323 three −leaded device. It is designed for general purpose amplifier applications |
ON Semiconductor |
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SMBT3906S | PNP Silicon Switching Transistor Array SMBT 3906S
PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in on |
Siemens Semiconductor Group |
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SMBT3906S | PNP Silicon Switching Transistors PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U:
Two (galvanic) internal isolated transistor with good m |
Infineon Technologies AG |
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SMBT3906U | PNP Silicon Switching Transistors PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U:
Two (galvanic) internal isolated transistor with good m |
Infineon Technologies AG |
www.DataSheet.in | 2017 | संपर्क |