SKW30N60 डाटा शीट PDF( Datasheet )

SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode  75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit wi

SKW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V a