SKI10123 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor SKI10123 FEATURES ·Drain Current –ID= 66A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12.1mΩ(Max) ·100% avalanche t

100 V, 66 A, 8.8 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI10123 Features  V(BR)DSS --------------------------------100 V (ID = 100 µA)  ID ---------------------------------------------------------- 6