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SIUD412ED DataSheet

No. Partie # Fabricant Description Fiche Technique
1
SIUD412ED

Vishay
N-Channel MOSFET

• TrenchFET® power MOSFET
• Ultra small 0.8 mm x 0.6 mm outline
• Ultra thin 0.4 mm max. height
• Typical ESD protection 1500 V (HBM)
• 1.2 V rated RDS(ON)
• 100% Rg tested
• Material categorization: for definitions of compliance please see www.visha
Datasheet



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