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SIHD12N50E | MOSFET www.vishay.com
SiHD12N50E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
550 VGS = 10 V
50 6 10 Single
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SIHD12N50E | N-Channel MOSFET Isc N-Channel MOSFET Transistor
SiHD12N50E
·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations fo |
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