डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SI6968BEDQ | Dual N-Channel 2.5-V (G-S) MOSFET Common Drain Si6968BEDQ
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection
FEATURES PRODUCT SUMMARY
VDS (V)
20
D TrenchFETr Power MOSFET D ESD Protected: 3000 V ID (A)
6.5 5.5
rDS(on) (W)
0.0 |
Vishay Siliconix |
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SI6968BEDQ_RC | R-C Thermal Model Parameters Si6968BEDQ_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Si |
Vishay Siliconix |
www.DataSheet.in | 2017 | संपर्क |