SI4800 डाटा शीट PDF( Datasheet )

SI4800 N-channel TrenchMOS™ logic level FET M3D315 Rev. 02 — 17 February 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package usi

Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0185 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A) 9 7 FEATURES • Halogen-free According to IEC

Si4800DY Vishay Siliconix N-Channel Reducded Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0185 @ VGS = 10 V 0.033 @ VGS = 4.5 V ID (A) 9 7 D D D D SO-8 S S S G 1 2 3 4 Top View Order