SI4410DY डाटा शीट PDF( Datasheet )

Si4410DY N-channel enhancement mode field-effect transistor M3D315 Rev. 02 — 05 July 2001 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchM

Si4410DY May 1999 Si4410DY* Single N-Channel Logic Level PowerTrench® MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process th

N-Channel 30-V (D-S) MOSFET Si4410DY Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0135 @ VGS = 10 V 30 0.020 @ VGS = 4.5 V ID (A) 10 8 FEATURES D TrenchFETr Power MOSFET D SO-8 S1 S2 S3 G4

PD - 91853C Si4410DY l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive S S S G Description This N-channel HEXFET® Power MOSFET is produced using International Rect

l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive l Lead-Free Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEX