SI2304 डाटा शीट PDF( Datasheet )

Si2304 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (

MCC R Micro Commercial Components Features Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 Phone:(818) 701-4933 Fax: (818) 701-4939 SI2304 • Halogen free available upon request by addi

SI2304 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@ 10V, Ids@ 3.5A RDS(ON), Vgs@ 4.5V, Ids@ 2.8A 70m Ω 80mΩ Features Advanced trench process technology High Density Cell Design For Ultra

N-Channel 30 V (D-S) MOSFET Si2304BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.070 at VGS = 10 V 0.105 at VGS = 4.5 V ID (A) 3.2 2.6 Qg (Typ.) 2.6 FEATURES • Halogen-free According t

New Product N-Channel 30-V (D-S) MOSFET Si2304DDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.060 at VGS = 10 V 30 0.075 at VGS = 4.5 V ID (A)a 3.6 3.6 Qg (Typ.) 2.1 nC FEATURES • Halogen-

SI2304DS N-channel enhancement mode field-effect transistor Rev. 01 — 17 August 2001 M3D088 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using Trench

N-Channel 30-V (D-S) MOSFET Si2304DS Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.117 @ VGS = 10 V 0.190 @ VGS = 4.5 V ID (A) 2.5 2.0 TO-236 (SOT-23) G1 S2 3D Top View Si2304DS (A4)* *Mark