SI2302 डाटा शीट PDF( Datasheet )

Features • Rugged and Reliable • Lead Free Product is Acquired • High Dense Cell Design for Extremely Low RDS(ON) • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen

SI2302 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 85m Ω 115mΩ Features Advanced trench process technology High Density Cell Design For Ultr

20V N-Cha SI2302 VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 3.6A 85m Ω 115mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package D

SHENZHEN YANGJING MICROELECTRONICS CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS SI2302 N-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter

MCC R Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2302A Features • Halogen free available upon request

N-Channel 2.5-V (G-S) MOSFET Si2302ADS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.060 at VGS = 4.5 V 0.115 at VGS = 2.5 V ID (A) 2.4 2.0 FEATURES • Halogen-free According to IEC 61249-2

www.vishay.com Si2302CDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET SOT-23 (TO-236) D 3 FEATURES • TrenchFET® power MOSFET • Material categorization: for definitions of compliance please see www.v