डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SFH483 | GaAlAs Infrared Emitter GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
SFH 483 L/M E7800
Wesentliche Merkmale
• Hergestellt im Schmelzepitaxieverfahren • Anode galvanisch mit dem Gehäuseb |
OSRAM |
|
SFH483 | GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter
SFH 483
ø0.45
Chip position
1 0.9 .1 1.1 .9 0
ø5.5 ø5.2
2.7
1
2.54 mm spacing
14.5 12.5
3.6 3.0
ø4.3 ø4.1
Anode (LD 242, BPX 63, SFH 464) Catho |
Siemens Semiconductor Group |
|
SFH483E7800 | GaAlAs Infrared Emitter 2007-12-07
GaAlAs Infrared Emitter GaAs-IR-Lumineszenzdiode Version 1.0
SFH 483 E7800
Features: • Fabricated in a liquid phase epitaxy process • Anode is electrically connected to the case
• High reliabi |
OSRAM |
www.DataSheet.in | 2017 | संपर्क |