डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SCTW40N120G2V | Silicon carbide Power MOSFET SCTW40N120G2V
Datasheet
Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 package
HiP247
3 2 1
D(2, TAB)
Features
Order code
VDS
RDS(on)max.
ID
SCTW40N120G2V
1200 V
100 mΩ
36 A
|
STMicroelectronics |
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SCTW40N120G2VAG | Automotive-grade silicon carbide Power MOSFET SCTW40N120G2VAG
Datasheet
Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 package
Features
Order code SCTW40N120G2VAG
VDS 1200 V
RDS(on) max. 105 mΩ
ID 33 A
HiP247
|
STMicroelectronics |
www.DataSheet.in | 2017 | संपर्क |