| No. | Partie # | Fabricant | Description | Fiche Technique |
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nexperia |
NPN/NPN transistor I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for |
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nexperia |
50V low VCEsat NPN transistor and benefits • Low collector-emitter saturation voltage • High collector current capability: IC and ICM • High collector current gain (hFE ) at high IC • Higher efficiency leading to less heat generation • Reduced PCB area requirements compared to DP |
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BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
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NXP |
50 V low VCEsat NPN transistor • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generation APPLICATIONS • Medium power switching and muting • Linea |
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NXP |
transistor • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements. QUICK REFERENCE DATA SYMBOL |
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UTC |
NPN SILICON TRANSISTOR * Collector-emitter saturation voltage:50V * High collector current gain (hFE) under high IC conditions * High collector current capability * Higher efficiency resulting in less heat generation * Complementary to UTC USS5350 ORDERING INFORMATION |
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NXP |
NPN transistor • Low collector-emitter saturation voltage • High collector current capability: IC and ICM • High collector current gain (hFE) at high IC • Higher efficiency leading to less heat generation • Reduced PCB area requirements compared to DPAK. APPLICATIO |
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NXP |
NPN transistor • High current capabilities • Low VCEsat. APPLICATIONS • Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers • VCEsat critical applications such as the latest low supply voltage IC applications • |
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Microsemi Corporation |
Silicon Power Rectifier |
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NXP |
NPN transistor • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat generation. APPLICATIONS • Power management applications • Low |
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Cirrus Logic |
192-kHz Stereo DAC Advanced multibit delta-sigma architecture 109-dB dynamic range -91-dB THD+N 24-bit conversion Supports audio sample rates up to 192 kHz Low-latency digital filtering Single-ended or differential analog output architecture Integrated |
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NXP |
2.7A NPN/PNP Low VCEsat (BISS) Transistor I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for |
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NXP |
transistor I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for |
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BLUE ROCKET ELECTRONICS |
Silicon NPN transistor ，。 Low VCE(sat), high current. / Applications ，，。 General purpose switching and muting, LCD back-lighting, supply line switching circuits. / Equivalent Circuit / Pinning 3 2 1 PIN 1：Emitter PIN 2：Base PIN 3：Collector / hFE Classificat |
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Kexin |
NPN Transistors ● High collector current capability ● High collector current gain ● Improved efficiency due to reduced heat generation. ● Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat 1 3 2 +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0. |
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Kexin |
NPN Transistors ● High collector current capability ● High collector current gain ● Improved efficiency due to reduced heat generation. ● Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat 1 3 2 +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0. |
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nexperia |
NPN/PNP transistor I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for |
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