| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba |
NPN Transistor (BR) CEO I c =10mA, I B =0 hFE(l) VCE=5V, I c=100mA hFE(2) VCE=5V, I c =400mA vCE(sat) I c =500mA, I B=50mA VBE(sat) I C= 500mA, I B =50mA MIN. - TYP. - MAX. UNIT 10 fik 1 lik 120 - - V 60 - 250 40 - - - - 1 V - - 1.5 V Tran |
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