logo

S-LBC817-40LT1G DataSheet

No. Partie # Fabricant Description Fiche Technique
1
LBC817-40LT1G

Leshan Radio Company
General Purpose Transistors
r
  –Emitter Breakdown Voltage (IC =
  –10 mA) Collector
  –Emitter Breakdown Voltage (VEB = 0, IC =
  –10 µA) Emitter
  –Base Breakdown Voltage (I E =
  –1.0 µA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) 1. FR
  –5 = 1.0 x 0.75 x 0.062 in. 2. Alu
Datasheet
2
S-LBC817-40LT1G

LRC
General Purpose Transistors
/W °C 1 BASE 3 COLLECTOR 2 EMITTER DEVICE MARKING LBC817
  –16LT1G = 6A; LBC817
  –25LT1G = 6B; LBC817
  –40LT1G = 6C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min OFF CHARACTERISTICS Collector
  –Emitter Break
Datasheet



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact