RU6888 डाटा शीट PDF( Datasheet )

RU6888 N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6.0mΩ (Type) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated

RU6888M N-Channel Advanced Power MOSFET Features • 60V/62A, RDS (ON) =7mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Reliable and Rugged • 100% avalanche tested • Lead Free and Green Devices Ava

RU6888R N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated

RU6888R3 N-Channel Advanced Power MOSFET Features • 68V/88A, RDS (ON) =6mΩ(Typ.)@VGS=10V • Insulation Slug(VISO≥1500VAC) • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching

RU6888S N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated