RU4 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com Fast-Recovery Rectifier Diodes Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) ( ) is with Heatsink Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V) max IF (A) IR

BL FEATURES Low cost GALAXY ELECTRICAL RU4Y(Z) --- RU4YX(Z) VOLTAGE RANGE: 100 --- 1000 V CURRENT: 2.5 -- 4.0 A HIGH EFFICIENCY ECTIFIERS DO - 27 Diffused junction Low leakage Low forward voltage drop High

www.eicsemi.com RU4 - RU4B PRV : 400 - 800 Volts Io : 1.5 Amperes TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 FAST RECOVERY RECTIFIERS DIODES DO - 201AD FEATURES : * High current capability * High surg

RoHS Silicon And Fast Recovery Rectifiers TYPE Maximum Maximum Peak Forward Recurrent Average Surge Current Peak Forward Half Reverse Rectified sine-wave Voltage Current Superimposed Maximum Forward Vol

RU40120M N-Channel Advanced Power MOSFET Features • 40V/120A, RDS (ON) =2.7mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested �

RU40120R N-Channel Advanced Power MOSFET MOSFET Features • 40V/120A, RDS (ON) =3.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Gr

RU40120S N-Channel Advanced Power MOSFET Features • 40V/120A, RDS (ON) =3.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Dev