RSJ250P10 डाटा शीट PDF( Datasheet )

isc P-Channel MOSFET Transistor RSJ250P10 ·FEATURES ·Drain Current –ID= -25A@ TC=25℃ ·Drain Source Voltage : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 63mΩ(Max) @VGS=10V ·100%

RSJ250P10 　　Pch -100V -25A Power MOSFET 　　 Datasheet lOutline VDSS -100V TO-263S 　 RDS(on)(Max.) 63mΩ SC-83 ID ±25A LPT(S) PD 50W 　 　　　　　　 lFeatures 1) Low on-resistan

4V Drive Pch MOSFET RSJ250P10FRA z Structure Silicon P-channel MOSFET zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. z Application Switching Data Sheet AEC-Q101 Qualified z Dimensions (Unit