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RN2911AFS DataSheet

No. Partie # Fabricant Description Fiche Technique
1
RN2911AFS

Toshiba
Silicon PNP Transistor
Q2 common) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range ― ― 2-1F1D TOSHIBA Weight: 0.001 g (typ.) Equivalent Cir
Datasheet



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