| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba |
Silicon PNP Epitaxial Type Transistor mmon) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2701 to 2706 RN2701 to 2704 RN2705, 27 |
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Toshiba |
Silicon PNP Epitaxial Type Transistor tor-base voltage RN2701JE VCBO −50 V Collector-emitter voltage to 2706JE VCEO −50 V RN2701JE to 2704JE −10 Emitter-base voltage VEBO V RN2705JE RN2706JE −5 Collector current IC −100 mA Collector power dissipation RN2701JE PC (Note |
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