डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RJQ6008DPM | IGBT/Diode RJQ6008DPM
600V - 10A - IGBT and Diode High Speed Power Switching
Features
Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery d |
Renesas |
|
RJQ6008DPM | IGBT/Diode | Renesas |
www.DataSheet.in | 2017 | संपर्क |