RJP63F3 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| RJP63F3 | N-Channel IGBT RJP63F3DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
• Trench gate and thin wafer technology (G6H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High spee |
 Renesas |
|
| RJP63F3A | N-Channel IGBT RJP63F3DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
• Trench gate and thin wafer technology (G6H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High spee |
Renesas |
|
| RJP63F3DPP-M0 | N-Channel IGBT Preliminary Datasheet
RJP63F3DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • • Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage |
Renesas |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |