RJP30H1 डाटा शीट PDF( Datasheet )

RJP30H1DPD Silicon N Channel IGBT High speed power switching Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr = 80 ns typ., tf = 150 ns typ.  Low collector to

Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching Features     Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150

Preliminary Datasheet RJP30H1DPP-M0 Silicon N Channel IGBT High speed power switching Features      Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf