डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RJP30E2 | N-Channel Power MOSFET RJP30E2DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
• Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching tf |
Renesas |
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RJP30E2DPK-M0 | N-Channel Power MOSFET Preliminary Datasheet
RJP30E2DPK-M0
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V t |
Renesas |
|
RJP30E2DPP-M0 | N-Channel Power MOSFET Preliminary Datasheet
RJP30E2DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
• • • • • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 |
Renesas |
www.DataSheet.in | 2017 | संपर्क |