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RJK6029DJA | Silicon N Channel MOS FET High Speed Power Switching Preliminary www.DataSheet4U.com Datasheet
RJK6029DJA
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 13.5 typ. (at ID = 0.1 A, VGS = 10 V, Ta = 25C) Low |
Renesas Technology |
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RJK6029DJA | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
www.DataSheet.in | 2017 | संपर्क |